論文リスト1999
当社SPMに関する論文リスト(1999年)です。
| 著者 | タイトル | 雑誌名 | 巻 | ページ |
| Balakumar, S. Zeng, H. C. |
Surface reconstuction in TGS family crystals under humidity and temperature controls | Mat res innovat | 2 | 289-298 |
| Horikoshi, T., Itoh, M., Kurihara, M., Kubo, K. Nishihara, H. |
Synthesis, redox behavior and electrodeposition of biferrocene-modified gold clusters | Journal of Electroanalytical Chemistry | 473 | 113-116 |
| Ishijima, S. A., Konomi, M., Takagi, T., Sato, M., Ishiguro, J. Osumi, M. |
Ultrastructure of cell wall of the cps8 actin mutant cell in Schizosaccharomyces pombe | FEMS Microbiology Letters | 180 | 31-37 |
| Koizumi, Y., Nakano, T. Umakoshi, Y. |
Plastic deformation and fracture behaviour of Ti3Al single crystals deformed at high temperatures under cyclic loading | Acta Materialia | 47 | 2019-2029 |
| Negishi Nobuaki, Takeuchi Koji |
Structural changes of transparent TiO2 thin films with heat treatment | Materials letters | 38 | 150-153 |
| Negishi, N. Takeuchi, K. |
Structural changes of transparent TiO2 thin films with heat treatment | Materials Letters | 38 | 150-153 |
| Ohachi, T., Feng, J. M., Asai, K., Uwani, M., Tateuchi, M., Vaccaro, P.O. Fujita, K. |
MBE Growth of AlGaAs/GaAs Heterostructures and Silicon Doping on GaAs (n11)A (n=1-4) Substrates | Journal of Crystal Growth | 201-202 | 226-231 |
| Saitou, M., Chinen, T. Odo, Y. |
Schwoebel effect and dynamic scaling behavior in nickel film growth by electrodeposition | Surface and Coatings Technology | 115 | 282-284 |
| Si, J. J., Guo, L.. W., Yang, Q. Q., Gao, J. H., Teng, D., Zhou, J. M. Wang, Q. M. |
Improvement of photoluminescence of strained SiGe/Si layers on patterned Si substrate | Solid State Communications | 112 | 255-259 |
| Watanabe, T., Yoshida, H., Saito, T., Yamamoto, T., Ikuhara, Y. Sakuma, T. |
Grain boundary Energy and atomic structure in alumina bicrystals | Materials science forum vols | 304 | 601-606 |
| Yanazawa Hiroshi, Futase Takuya Suzuki Isao |
Quantitative surface area evaluation of rugged polycrystalline Si plate for dynamic random access memory capacitor by xenon adsorption | J. Vac. Sci. Technol. B | 17 | 2656-2659 |